Study of the initial stages of TiO2 growth on Si wafers by XPS

Y Leprince-Wang (1)

1 LPMDI - Laboratoire de Physique des Matériaux Divisés et des Interfaces

Very thin TiO2 films have been deposited by electron-beam evaporation on Si wafers. X-Ray photoelectron spectroscopy (XPS) was used to investigate the initial stages of TiO2 growth. Chemical composition and stoichiometry of the reaction products were analyzed, based on the Ti2p, O1s, Si2p core levels, with an energy resolution of 0.8 eV. A homogeneous layer model was established for the quantitative analysis. The result of calculation was found in agreement with the result of measurement. (C) 2002 Elsevier Science B.V. All rights reserved.

Y Leprince-Wang. Study of the initial stages of TiO2 growth on Si wafers by XPS. Surface and Coatings Technology, 2002, 150 (2-3), pp.257--262. ⟨10.1016/S0257-8972(01)01541-9⟩. ⟨hal-00693645⟩