A wideband 3D-transition between coplanar and inverted microstrip on silicon to characterize a line in MEMS technology

L Martoglio 1 E Richalot 2 Gaelle Lissorgues O Picon
1 ESYCOM - Electronique, Systèmes de communication et Microsystèmes
2 ESIEE - Laboratoire IAAI
Abstract : A wideband coplanar to inverted microstrip transition is developed for a low-loss and low-cost inverted line air silicon. The measurements and simulation results are presented. The measured performance of the back-to-back transitions exhibits an insertion loss of less than 0.4 dB and a return loss better than 13.5 dB over a bandwidth from I to 18 GHZ. The simulation and measurement results agree closely. (c) 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 46: 378-381, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20992.
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Microwave and Optical Technology Letters, Wiley, 2005, 46 (4), pp.378--381. 〈10.1002/mop.20992〉
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Soumis le : mercredi 2 mai 2012 - 23:48:07
Dernière modification le : jeudi 7 février 2019 - 17:04:18

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UNIV-MLV | ESYCOM_EAM | ESYCOM | CV_ESYCOM | UPEC-UPEM | ESIEE-PARIS

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L Martoglio, E Richalot, Gaelle Lissorgues, O Picon. A wideband 3D-transition between coplanar and inverted microstrip on silicon to characterize a line in MEMS technology. Microwave and Optical Technology Letters, Wiley, 2005, 46 (4), pp.378--381. 〈10.1002/mop.20992〉. 〈hal-00693798〉

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