A wideband 3D-transition between coplanar and inverted microstrip on silicon to characterize a line in MEMS technology

L Martoglio 1 Elodie Richalot 2 Gaelle Lissorgues O Picon
1 ESYCOM - Electronique, Systèmes de communication et Microsystèmes
2 ESIEE - Laboratoire IAAI
Abstract : A wideband coplanar to inverted microstrip transition is developed for a low-loss and low-cost inverted line air silicon. The measurements and simulation results are presented. The measured performance of the back-to-back transitions exhibits an insertion loss of less than 0.4 dB and a return loss better than 13.5 dB over a bandwidth from I to 18 GHZ. The simulation and measurement results agree closely. (c) 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 46: 378-381, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20992.
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Submitted on : Wednesday, May 2, 2012 - 11:48:07 PM
Last modification on : Tuesday, June 11, 2019 - 2:32:05 PM

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L Martoglio, Elodie Richalot, Gaelle Lissorgues, O Picon. A wideband 3D-transition between coplanar and inverted microstrip on silicon to characterize a line in MEMS technology. Microwave and Optical Technology Letters, Wiley, 2005, 46 (4), pp.378--381. ⟨10.1002/mop.20992⟩. ⟨hal-00693798⟩

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