A wideband 3D-transition between coplanar and inverted microstrip on silicon to characterize a line in MEMS technology

Abstract : A wideband coplanar to inverted microstrip transition is developed for a low-loss and low-cost inverted line air silicon. The measurements and simulation results are presented. The measured performance of the back-to-back transitions exhibits an insertion loss of less than 0.4 dB and a return loss better than 13.5 dB over a bandwidth from I to 18 GHZ. The simulation and measurement results agree closely. (c) 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 46: 378-381, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20992.