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Journal articles
A wideband 3D-transition between coplanar and inverted microstrip on silicon to characterize a line in MEMS technology
Abstract : A wideband coplanar to inverted microstrip transition is developed for a low-loss and low-cost inverted line air silicon. The measurements and simulation results are presented. The measured performance of the back-to-back transitions exhibits an insertion loss of less than 0.4 dB and a return loss better than 13.5 dB over a bandwidth from I to 18 GHZ. The simulation and measurement results agree closely. (c) 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 46: 378-381, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20992.
https://hal-upec-upem.archives-ouvertes.fr/hal-00693798
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Submitted on : Wednesday, May 2, 2012 - 11:48:07 PM
Last modification on : Tuesday, June 2, 2020 - 7:36:03 AM
Contributor : Admin Esycom Connect in order to contact the contributor
Submitted on : Wednesday, May 2, 2012 - 11:48:07 PM
Last modification on : Tuesday, June 2, 2020 - 7:36:03 AM
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