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Single ZnO Nanowire/p-type GaN Heterojunctions for Photovoltaic Devices and UV Light-Emitting Diodes

Abstract : We fabricate heterojunctions consisting of a single n-type ZnO nanowire and a p-type GaN film. The photovoltaic effect of heterojunctions exhibits open-circuit voltages ranging from 2 to 2.7 V, and a maximum output power reaching 80 nW. Light-emitting diodes with UV electroluminescence based on the heterojunctions are demonstrated.
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https://hal-upec-upem.archives-ouvertes.fr/hal-00693186
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Submitted on : Wednesday, May 2, 2012 - 10:39:24 AM
Last modification on : Wednesday, February 26, 2020 - 7:06:15 PM

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Ya-Qing Bie, Zhi-Min Liao, Peng-Wei Wang, Yong-Bo Zhou, Xiao-Bing Han, et al.. Single ZnO Nanowire/p-type GaN Heterojunctions for Photovoltaic Devices and UV Light-Emitting Diodes. Advanced Materials, Wiley-VCH Verlag, 2010, 22 (38), pp.4284--+. ⟨10.1002/adma.201000985⟩. ⟨hal-00693186⟩

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