Advanced etching of silicon based on deep reactive ion etching for silicon high aspect ratio microstructures and three-dimensional micro- and nanostructures

F Marty 1 L Rousseau B Saadany B Mercier O Francais Y Mita Tarik Bourouina
1 ESYCOM - Electronique, Systèmes de communication et Microsystèmes
Abstract : Different processes involving an inductively coupled plasma reactor are presented either for deep reactive ion etching or for isotropic etching of silicon. On one hand, high aspect ratio microstructures with aspect ratio up to 107 were obtained on sub-micron trenches. Application to photonic MEMS is presented. Isotropic etching is also used either alone or in combination with anisotropic etching to realize various 3D shapes. (c) 2005 Elsevier Ltd. All rights reserved.
Document type :
Journal articles
Complete list of metadatas
https://hal-upec-upem.archives-ouvertes.fr/hal-00692954
Contributor : Admin Esycom <>
Submitted on : Tuesday, May 1, 2012 - 5:42:24 PM
Last modification on : Thursday, February 7, 2019 - 5:03:16 PM

Identifiers

Collections

UNIV-MLV | ESYCOM | CV_ESYCOM | UPEC-UPEM | CNAM | ESIEE-PARIS

Citation

F Marty, L Rousseau, B Saadany, B Mercier, O Francais, et al.. Advanced etching of silicon based on deep reactive ion etching for silicon high aspect ratio microstructures and three-dimensional micro- and nanostructures. Microelectronics Journal, Elsevier, 2005, 36 (7), pp.673--677. ⟨10.1016/j.mejo.2005.04.039⟩. ⟨hal-00692954⟩

Export

BibTeX TEI DC DCterms EndNote

Share

Metrics

Record views

152

Contact

CCSD