Advanced etching of silicon based on deep reactive ion etching for silicon high aspect ratio microstructures and three-dimensional micro- and nanostructures

F Marty; L Rousseau; B Saadany; B Mercier; O Francais; Y Mita; Tarik Bourouina

doi:10.1016/j.mejo.2005.04.039

Advanced etching of silicon based on deep reactive ion etching for silicon high aspect ratio microstructures and three-dimensional micro- and nanostructures

F Marty ¹ L Rousseau B Saadany B Mercier O Francais Y Mita Tarik Bourouina

1 ESYCOM - Electronique, Systèmes de communication et Microsystèmes

Abstract : Different processes involving an inductively coupled plasma reactor are presented either for deep reactive ion etching or for isotropic etching of silicon. On one hand, high aspect ratio microstructures with aspect ratio up to 107 were obtained on sub-micron trenches. Application to photonic MEMS is presented. Isotropic etching is also used either alone or in combination with anisotropic etching to realize various 3D shapes. (c) 2005 Elsevier Ltd. All rights reserved.

Type de document :

Article dans une revue

Microelectronics Journal, Elsevier, 2005, 36 (7), pp.673--677. 〈10.1016/j.mejo.2005.04.039〉

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Advanced etching of silicon based on deep reactive ion etching for silicon high aspect ratio microstructures and three-dimensional micro- and nanostructures

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Advanced etching of silicon based on deep reactive ion etching for silicon high aspect ratio microstructures and three-dimensional micro- and nanostructures

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