Formation mechanism of homo-epitaxial morphology on ZnO (000 ± 1) polar surfaces

Yamin Leprince 1 Rui Zhu Qing Zhao 2 Jun Xu 3 Li Chen 4 Y. Leprince-Wang 5 Dapeng Yu 6
1 ESYCOM - Electronique, Systèmes de communication et Microsystèmes
2 DCSO - Laboratoire de synthèse organique
3 Georgia Institute of Technology (Georgia Tech)
4 Anhui Institute of Architectural and Industry
5 LPMDI - Laboratoire de Physique des Matériaux Divisés et des Interfaces
6 Electron Microscopy Laboratory and State Key Laboratory for Microscopic Physics
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Journal articles
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Contributor : Yamin Leprince <>
Submitted on : Thursday, March 1, 2018 - 4:43:06 PM
Last modification on : Thursday, February 7, 2019 - 4:46:24 PM

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UPEC-UPEM | X-DCSO | INC-CNRS | X | PARISTECH | X-DEP-CHIM | ESYCOM | ESIEE-PARIS | UNIV-HESAM

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Yamin Leprince, Rui Zhu, Qing Zhao, Jun Xu, Li Chen, et al.. Formation mechanism of homo-epitaxial morphology on ZnO (000 ± 1) polar surfaces. CrystEngComm, Royal Society of Chemistry, 2013, 15 (21), ⟨10.1039/c2ce26567b⟩. ⟨hal-01721052⟩

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