ESIEE Paris (2 boulevard Blaise Pascal
Cité Descartes
BP 99
93162 Noisy-le-Grand Cedex - France)
Abstract : We present a simple and accurate model for the reflectance simulation of black silicon (BSi) based on the finite element method (FEM). Normalized-root-mean-square error (NRMSE) with experimental measurements below 0.25% has been obtained for wavelength range between 450 and 950 nm. The model is made of a four basic-shape cell whose dimensions are extracted from an accurate topography of the BSi obtained by FIB-SEM tomography. Additional BSi modelling techniques studied, that takes in account the BSi irregular topography, demonstrates an important influence of the local structure height variation in the BSi surface spectral reflectance.
https://hal.archives-ouvertes.fr/hal-01444437
Contributor : Elodie Richalot
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Submitted on : Tuesday, January 24, 2017 - 10:16:37 AM
Last modification on : Thursday, February 7, 2019 - 3:06:23 PM
Long-term archiving on : Tuesday, April 25, 2017 - 2:13:41 PM
