ESIEE Paris (2 boulevard Blaise Pascal
Cité Descartes
BP 99
93162 Noisy-le-Grand Cedex - France)
Abstract : We present a simple and accurate model for the reflectance simulation of black silicon (BSi) based on the finite element method (FEM). Normalized-root-mean-square error (NRMSE) with experimental measurements below 0.25% has been obtained for wavelength range between 450 and 950 nm. The model is made of a four basic-shape cell whose dimensions are extracted from an accurate topography of the BSi obtained by FIB-SEM tomography. Additional BSi modelling techniques studied, that takes in account the BSi irregular topography, demonstrates an important influence of the local structure height variation in the BSi surface spectral reflectance.
https://hal.archives-ouvertes.fr/hal-01444437
Contributeur : Elodie Richalot
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Soumis le : mardi 24 janvier 2017 - 10:16:37
Dernière modification le : jeudi 12 juillet 2018 - 12:22:04
Document(s) archivé(s) le : mardi 25 avril 2017 - 14:13:41
