Effect of black silicon disordered structures distribution on its wideband reduced reflectance

David Abi Saab 1 Shermila Mostarshedi 1 Philippe Basset 1 Stéphane Protat 1 Dan Angelescu 1 Elodie Richalot 1
1 ESYCOM - Electronique, Systèmes de communication et Microsystèmes
Abstract : We present a simple and accurate model for the reflectance simulation of black silicon (BSi) based on the finite element method (FEM). Normalized-root-mean-square error (NRMSE) with experimental measurements below 0.25% has been obtained for wavelength range between 450 and 950 nm. The model is made of a four basic-shape cell whose dimensions are extracted from an accurate topography of the BSi obtained by FIB-SEM tomography. Additional BSi modelling techniques studied, that takes in account the BSi irregular topography, demonstrates an important influence of the local structure height variation in the BSi surface spectral reflectance.
Keywords : Nanostructures reflectivity measurement finite element method silicon surfaces
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Journal articles
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Submitted on : Tuesday, January 24, 2017 - 10:16:37 AM
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David Abi Saab, Shermila Mostarshedi, Philippe Basset, Stéphane Protat, Dan Angelescu, et al.. Effect of black silicon disordered structures distribution on its wideband reduced reflectance. Materials Research Express, IOP Publishing Ltd, 2014, 1, pp.45045 - 45045. ⟨10.1088/2053-1591/1/4/045045⟩. ⟨hal-01444437⟩

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