Edge illuminated SiGe heterojunction phototransistor for RoF applications

Abstract : The first edge illuminated SiGe phototransistor based on the available commercial SiGe/Si BiCMOS technology for low cost detector or mixer in Radio-over-Fiber applications. Its technology and structure are described. Edge mapping of the phototransistor performances, so as to observe the fastest and the highest sensitive areas of the structure, is performed. The phototransistor exhibits a cutoff frequency of 890MHz and low frequency responsivity of 0.45A/W at 850nm. This new SiGe/Si phototransistor structure provides a cutoff frequency double to the one of a top illuminated SiGe/Si phototransistor obtained using the same BiCMOS technology.
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Article dans une revue
Electronics Letters, IET, 2015, 51, pp.1906 - 1908. 〈10.1049/el.2015.2448〉
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https://hal-upec-upem.archives-ouvertes.fr/hal-01436923
Contributeur : Elodie Richalot <>
Soumis le : lundi 16 janvier 2017 - 18:02:05
Dernière modification le : jeudi 13 septembre 2018 - 15:24:07
Document(s) archivé(s) le : lundi 17 avril 2017 - 15:28:19

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Z Tegegne, C Viana, J Polleux, M Grzeskowiak, Elodie Richalot. Edge illuminated SiGe heterojunction phototransistor for RoF applications. Electronics Letters, IET, 2015, 51, pp.1906 - 1908. 〈10.1049/el.2015.2448〉. 〈hal-01436923〉

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