Study of black silicon obtained by cryogenic plasma etching : Approach to achieve the hot spot of a thermoelectric energy harvester

Abstract : n this paper, we study the enhanced absorption properties of micro/nano structured silicon surface under incident electromagnetic illumination and its capacity to convert light into heat. We simulate the optical reflectance of three-dimensional micro/nano silicon cones of different dimensions and under different electric field incident angles. According to the favorable simulation results, we fabri- cate black silicon with conical microstructures that exhibits excellent anti-reflectivity behavior. Plasma etching under cryogenic temperatures is used for this purpose in an induc- tively coupled plasma-reactive ion etching reactor. The reflectance of the black silicon is measured to be approxi- mately 1 % in the optical wavelength range, by using an integrating sphere coupled to a calibrated spectrometer. Fur- thermore, a device integrating a resistance temperature detector in a black silicon area is developed in order to investigate its efficiency as a photo-thermal converter
Type de document :
Article dans une revue
Microsystem Technologies, Springer Verlag, 2013, 18 (11), pp.1807-1814
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https://hal-upec-upem.archives-ouvertes.fr/hal-00909502
Contributeur : Shermila Mostarshedi <>
Soumis le : mardi 26 novembre 2013 - 12:53:48
Dernière modification le : jeudi 12 juillet 2018 - 12:22:03

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  • HAL Id : hal-00909502, version 1

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K.N. Nguyen, David Abi-Saab, Philippe Basset, Elodie Richalot, Maurine Malak, et al.. Study of black silicon obtained by cryogenic plasma etching : Approach to achieve the hot spot of a thermoelectric energy harvester. Microsystem Technologies, Springer Verlag, 2013, 18 (11), pp.1807-1814. 〈hal-00909502〉

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