Study of black silicon obtained by cryogenic plasma etching : Approach to achieve the hot spot of a thermoelectric energy harvester

K.N. Nguyen; David Abi-Saab; Philippe Basset; Elodie Richalot; Maurine Malak; Nicolas Pavy; F. Flourens; F. Marty; Dan Angelescu; Yamin Leprince; Tarik Bourouina

Study of black silicon obtained by cryogenic plasma etching : Approach to achieve the hot spot of a thermoelectric energy harvester

K.N. Nguyen David Abi-Saab ¹ Philippe Basset ¹ Elodie Richalot ¹ Maurine Malak ¹ Nicolas Pavy ¹ F. Flourens F. Marty ¹ Dan Angelescu ¹ Yamin Leprince ² Tarik Bourouina ¹

1 ESYCOM - Electronique, Systèmes de communication et Microsystèmes

2 LPMDI - Laboratoire de Physique des Matériaux Divisés et des Interfaces

Abstract : n this paper, we study the enhanced absorption properties of micro/nano structured silicon surface under incident electromagnetic illumination and its capacity to convert light into heat. We simulate the optical reflectance of three-dimensional micro/nano silicon cones of different dimensions and under different electric field incident angles. According to the favorable simulation results, we fabri- cate black silicon with conical microstructures that exhibits excellent anti-reflectivity behavior. Plasma etching under cryogenic temperatures is used for this purpose in an induc- tively coupled plasma-reactive ion etching reactor. The reflectance of the black silicon is measured to be approxi- mately 1 % in the optical wavelength range, by using an integrating sphere coupled to a calibrated spectrometer. Fur- thermore, a device integrating a resistance temperature detector in a black silicon area is developed in order to investigate its efficiency as a photo-thermal converter

Type de document :

Article dans une revue

Microsystem Technologies, Springer Verlag, 2013, 18 (11), pp.1807-1814

Domaine :

Sciences de l'ingénieur [physics] / Electronique

Liste complète des métadonnées

https://hal-upec-upem.archives-ouvertes.fr/hal-00909502
Contributeur : Shermila Mostarshedi <>
Soumis le : mardi 26 novembre 2013 - 12:53:48
Dernière modification le : jeudi 13 septembre 2018 - 15:24:07

Study of black silicon obtained by cryogenic plasma etching : Approach to achieve the hot spot of a thermoelectric energy harvester

Identifiants

Collections

Citation

Exporter

Métriques

239

Contact

Study of black silicon obtained by cryogenic plasma etching : Approach to achieve the hot spot of a thermoelectric energy harvester

Identifiants

Collections

Citation

Exporter

Partager

Métriques

239

Contact