Study for the non-contact characterization of metallization ageing of power electronic semiconductor devices using the eddy current technique

Abstract : The ageing of the metallization layers of power semiconductor dies may be the cause of failure of power semiconductor modules. Usual indicators of failure like on-state voltage drops make it difficult to highlight the deterioration of the metallization layer. In this study, we evaluate the relevance of the characterization of power device metallizations by means of the eddy current sensors. Experimental results show the ability to monitor the state and the evolution of the metallization ageing with such a technique. (C) 2011 Elsevier Ltd. All rights reserved.
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Article dans une revue
Microelectronics Reliability, Elsevier, 2011, 51 (6), pp.1127--1135. 〈10.1016/j.microrel.2011.02.002〉
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Soumis le : mardi 1 mai 2012 - 17:13:19
Dernière modification le : jeudi 7 février 2019 - 17:04:14

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T. A. Nguyen, P. -Y. Joubert, S. Lefebvre, G. Chaplier, L. Rousseau. Study for the non-contact characterization of metallization ageing of power electronic semiconductor devices using the eddy current technique. Microelectronics Reliability, Elsevier, 2011, 51 (6), pp.1127--1135. 〈10.1016/j.microrel.2011.02.002〉. 〈hal-00692911〉

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