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Study for the non-contact characterization of metallization ageing of power electronic semiconductor devices using the eddy current technique

T. A. Nguyen 1 P. -Y. Joubert 1 S. Lefebvre 1 G. Chaplier 1 L. Rousseau 2
1 SATIE - Systèmes et Applications des Technologies de l'Information et de l'Energie
2 ESYCOM - Electronique, Systèmes de communication et Microsystèmes
Abstract : The ageing of the metallization layers of power semiconductor dies may be the cause of failure of power semiconductor modules. Usual indicators of failure like on-state voltage drops make it difficult to highlight the deterioration of the metallization layer. In this study, we evaluate the relevance of the characterization of power device metallizations by means of the eddy current sensors. Experimental results show the ability to monitor the state and the evolution of the metallization ageing with such a technique. (C) 2011 Elsevier Ltd. All rights reserved.
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https://hal-upec-upem.archives-ouvertes.fr/hal-00692911
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Submitted on : Tuesday, May 1, 2012 - 5:13:19 PM
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CNRS | ENS-CACHAN | SATIE | ESYCOM_MCN | ESYCOM | UNIV-MLV | CV_ESYCOM | UPEC-UPEM | UNIV-CERGY | CNAM | IFSTTAR | ESIEE-PARIS | UNIV-HESAM | CY-TECH-SE | ENS-PARIS-SACLAY

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T. A. Nguyen, P. -Y. Joubert, S. Lefebvre, G. Chaplier, L. Rousseau. Study for the non-contact characterization of metallization ageing of power electronic semiconductor devices using the eddy current technique. Microelectronics Reliability, Elsevier, 2011, 51 (6), pp.1127--1135. ⟨10.1016/j.microrel.2011.02.002⟩. ⟨hal-00692911⟩

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