Low-noise high-resolution BAW-based high-frequency oscillator

Abstract : The design of a 500 MHz oscillator in a 65 nm CMOS process using a 2 GHz bulk acoustic wave (BAW) resonator is presented. A digital frequency control is implemented using a switched capacitor bank in parallel to the resonator. The tuning range is up to 500 kHz with a minimum step of 200 Hz. The oscillator core uses a differential topology and is designed for low phase noise (2128 dBc/Hz at 100 kHz offset) at low power consumption (0.9 mW). It is followed by a low-noise divider, which provides a 500 MHz output with a phase noise of 2139 dBc/Hz at 100 kHz offset from the carrier.
Type de document :
Article dans une revue
Electronics Letters, IET, 2009, 45 (17), pp.914-916. <10.1049/el.2009.1779>

Contributeur : Jean-François Bercher <>
Soumis le : mardi 1 mai 2012 - 16:46:39
Dernière modification le : mercredi 15 avril 2015 - 16:07:01



Pierre Guillot, Pascal Philippe, Corinne Berland, Jean-François Bercher, Patrice Gamand. Low-noise high-resolution BAW-based high-frequency oscillator. Electronics Letters, IET, 2009, 45 (17), pp.914-916. <10.1049/el.2009.1779>. <hal-00692899>



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