A LOW-LOSS PLANAR GOUBAU LINE AND A COPLANAR-PGL TRANSITION ON HIGH-RESISTIVITY SILICON SUBSTRATE IN THE 57-64 GHz BAND

Abstract : Planar Goubau line (PGL) structures on high-resistivity silicon are adapted to the 57-64 GHz frequency band. Simulations and measurements show a lower attenuation than with the coplanar line is obtained. Very low losses are attained with a measured average attenuation of 0.064 dB/mm on the whole band. To allow this measurement, coplanar-PGL transitions have been optimized. (C) 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:164-168, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26470
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J. Emond, M. Grzeskowiak, Gaelle Lissorgues, S. Protat, F. Deshours, et al.. A LOW-LOSS PLANAR GOUBAU LINE AND A COPLANAR-PGL TRANSITION ON HIGH-RESISTIVITY SILICON SUBSTRATE IN THE 57-64 GHz BAND. Microwave and Optical Technology Letters, Wiley, 2012, 54 (1), pp.164--168. ⟨10.1002/mop.26470⟩. ⟨hal-00692720⟩

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