High robustness of epitaxial 4H-SiC graphene to oxidation processes

V.S. Prudkovskiy (1) , K.P. Katin (2) , M.M. Maslov (2) , Pascal Puech (3) , R. Yakimova (4, 5) , G. Deligeorgis (6)

1 UOC - University of Crete [Heraklion]
2 The National Research Nuclear University MEPhI (Moscow Engineering Physics Institute) [Moscow, Russia]
3 CEMES-M3 - Matériaux Multi-fonctionnels et Multi-échelles
4 IFM - Department of Physics, Chemistry and Biology [Linköping]
5 LIU - Linköping University
6 FORTH - Foundation for Research and Technology - Hellas

We present an experimental prove of high robustness of epitaxial 4H-SiC graphene to oxidation processes. During a post-fabrication cleaning procedure we noticed that epitaxial graphene is extremely stable to ozone treatment. We analyse graphene properties using both electron transport measurements and numerical calculations. We ascribe this effect to the substrate topography, which significantly affects the graphene stability under UV/ozone treatment.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

V.S. Prudkovskiy, K.P. Katin, M.M. Maslov, Pascal Puech, R. Yakimova, et al.. High robustness of epitaxial 4H-SiC graphene to oxidation processes. Journal of Physics: Conference Series, 2018, 1124, pp.081020. ⟨10.1088/1742-6596/1124/8/081020⟩. ⟨hal-02080621⟩